| PART |
Description |
Maker |
| HY64UD16322M-DF85E HY64UD16322M-DF85I HY64UD16322M |
Mobile PSRAM - 32Mb
2M x 16 bit Low Low Power 1T/1C Pseudo SRAM
x16|3.0(VDD)3.0(VDDQ)V|70/85|Pseudo SRAM - 32M x16 | 3.0（VDD）在3.0（提供VDDQ）V | 70/85 |伪静态存储器- 32M
|
Hynix Semiconductor, Inc.
|
| GS881Z18AT-133 GS881Z18AT-133I GS881Z18AT-150 GS88 |
133MHz 8.5ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM
150MHz 7.5ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM
166MHz 7ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM
200MHz 6.5ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM
225MHz 6ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM
250MHz 5.5ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM
|
GSI Technology
|
| PZ5064-7A68 |
7.5ns; V(dd): -0.5 to 7.0V; 64 macrocell CPLD
|
Philips
|
| EM47FM0888MBA |
JEDEC Standard VDD/VDDQ
|
Eorex Corporation
|
| EM44CM1688LBC-25E EM44CM1688LBC-3 EM44CM1688LBC-3I |
JEDEC Standard VDD/VDDQ
|
Eorex Corporation
|
| MT58L256L3 MT58L256L32D |
8Mb Syncburst SRAM, 3.3V Vdd, 3.3V I/O, Pipelined, Dcd,
|
MICRON
|
| MT8808 |
8 x 8 Analog Switch Array with Low On-resistance, for (VDD - VEE) = 4.5 V to 13.2 V
|
Zarlink Semiconductor
|
| XCM410AA01MR-G XCM4101 |
2 Channel Voltage Detector (Sense Pin separated from VDD)
|
Torex Semiconductor
|
| XCM410 XCM410AA01ML XCM410AA01MR |
2 Channel Voltage Detector (Sense Pin separated from VDD)
|
Torex Semiconductor
|
| 2SK3668 |
Low gate charge QG= 26 nC TYP. (VDD = 320 V, VGS = 10 V, ID = 10 A)
|
TY Semiconductor Co., Ltd
|
| GS8160F32T-6I GS8160F18T-8.5 GS8160F36T-8.5I GS816 |
6ns 512K x 32 18MB synchronous burst SRAM
8.5ns 1M x 18 18MB synchronous burst SRAM
8.5ns 512K x 36 18MB synchronous burst SRAM
8.5ns 512K x 32 18MB synchronous burst SRAM
|
GSI Technology
|
